SUBMICRON LITHOGRAPHY USING FOCUSED-ION-BEAM EXPOSURE FOLLOWED BY A DRY DEVELOPMENT.

T. Kato, H. Morimoto, K. Tsukamoto, H. Shinohara, M. Inuishi

研究成果: Conference contribution

抄録

Ultrafine lithography for dimensions less than 0. 5 mu m is one of the most promising applications of focused ion beams (FIB) because ion beams hardly suffer from a proximity effect. Submicron patterns are delineated in the resist by irradiation of gallium FIB followed by a dry development. The patterning characteristics and their application to N-MOS FETs with 0. 3-0. 8 mu m gates are discussed.

本文言語English
ホスト出版物のタイトルDigest of Technical Papers - Symposium on VLSI Technology
出版社Business Cent for Academic Soc Japan
ページ72-73
ページ数2
ISBN(印刷版)4930813093
出版ステータスPublished - 1985 12 1
外部発表はい

出版物シリーズ

名前Digest of Technical Papers - Symposium on VLSI Technology
ISSN(印刷版)0743-1562

ASJC Scopus subject areas

  • 電子工学および電気工学

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