Subplcosecond exciton spin relaxation in GaN

T. Kuroda, T. Yabushita, T. Kosuge, A. Tackeuchi, K. Taniguchi, T. Chinone, N. Horio

研究成果: Article

37 引用 (Scopus)

抜粋

The spin-relaxation process of A-band exciton in GaN is observed by spin-dependent pump and probe reflectance measurement with subpicosecond time resolution. The spin-relaxation times at 150-225 K are 0.47-0.25 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin-relaxation time τs is found to be proportional to T-14, where T is the temperature.

元の言語English
ページ(範囲)3116-3118
ページ数3
ジャーナルApplied Physics Letters
85
発行部数15
DOI
出版物ステータスPublished - 2004 10 11

    フィンガープリント

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

これを引用

Kuroda, T., Yabushita, T., Kosuge, T., Tackeuchi, A., Taniguchi, K., Chinone, T., & Horio, N. (2004). Subplcosecond exciton spin relaxation in GaN. Applied Physics Letters, 85(15), 3116-3118. https://doi.org/10.1063/1.1806284