Substitution and electrical activation of carbon in C- and C + P-implanted InP

K. Kushida, O. Ogawa, K. Kuriyama*, N. Hayashi, M. Ogura, M. Hasegawa, Naoto Kobayashi

*この研究の対応する著者

研究成果: Article査読

抄録

Substitution and electrical activation of carbon in 12C+- and 12C++31P+-implanted InP were studied for various annealing stages (773-923 K for 20 min). 12C+ was implanted into semi-insulating InP at a range of ∼3.0 μm with a total dose of 3 × 1014 cm-2. The co-implantation of 12C+ and 31P+ was performed at a range of ∼2.0 μm with an individual dose of 3 × 1014 cm-2. Rutherford back scattering, X-ray diffraction and Raman spectroscopy measurements showed the improvement of the crystallinity in the InP matrix by the annealing, indicating the disappearance of the introduced vacancy-interstitial pairs. Those were introduced during ion irradiation. All the annealed samples showed the n-type conduction by a van der Pauw method. The electric activation rate in the 12C+ implanted samples reached to 4.5% for those annealed at 923 K. For the co-implanted samples, the rate was slightly improved (∼7.3%). Nuclear reaction analyses for the 12C+-implanted samples using a 12C(d,p)13C reaction showed a tendency that carbon is easily incorporated into the interstitial lattice sites.

本文言語English
ページ(範囲)869-872
ページ数4
ジャーナルNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
190
1-4
DOI
出版ステータスPublished - 2002 5
外部発表はい

ASJC Scopus subject areas

  • 表面、皮膜および薄膜
  • 器械工学
  • 表面および界面

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