Successful application of the 8-band kp framework to optical properties of highly strained In(Ga)As/InGaAs quantum wells with strong conduction-valence band coupling

T. Fujisawa*, T. Sato, M. Mitsuhara, T. Kakitsuka, T. Yamanaka, Y. Kondo, F. Kano

*この研究の対応する著者

研究成果: Conference contribution

抄録

Band-edge optical properties of highly strained In(Ga)As/InGaAs quantum wells are analyzed by using 6- and 8-band kp theory. It is shown that the 8-band model is necessary for the analysis of In(Ga)As/InGaAs quantum wells having strain larger than 2%. The photoluminescence peak wavelength and absorption spectra of InAs/InGaAs quantum wells with the strain of 3.2 % calculated by 8-band model are in very good agreement with those obtained by experiment, showing the validity of the results presented here.

本文言語English
ホスト出版物のタイトル2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08
ページ113-114
ページ数2
DOI
出版ステータスPublished - 2008 12月 22
外部発表はい
イベント2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08 - Nottingham, United Kingdom
継続期間: 2008 9月 12008 9月 4

出版物シリーズ

名前2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08

Conference

Conference2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08
国/地域United Kingdom
CityNottingham
Period08/9/108/9/4

ASJC Scopus subject areas

  • 計算理論と計算数学
  • 電子工学および電気工学

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