Successful application of the 8-band k·p theory to optical properties of highly strained In(Ga)As/InGaAs quantum wells with strong conduction-valence band coupling

Takeshi Fujisawa, Tomonari Sato, Manabu Mitsuhara, Takaaki Kakitsuka, Takayuki Yamanaka, Yasuhiro Kondo, Fumiyoshi Kano

研究成果: Article査読

16 被引用数 (Scopus)

抄録

Band-edge optical properties of highly strained In(Ga)As/InGaAs quantum wells on InP with the bandgap wavelength longer than 2 μm are analyzed by using 6- and 8-band k·p theory. It is demonstrated that the 8-band model is indispensable for the analysis of highly strained In(Ga)As/InGaAs quantum wells due to the strong coupling between conduction and valence bands induced by large strain in the well. Furthermore, an energy correction originating from the interaction between the spin-orbit coupling and the strain, which has been discarded in conventional k·p theory, is taken into account, and the role of the effect for highly strained quantum wells is discussed. The photoluminescence peak wavelength and absorption spectra of In(Ga)As/InGaAs quantum wells calculated by 8-band model are in excellent agreement with those obtained by experiment, showing the validity of the results presented here.

本文言語English
論文番号2021776
ページ(範囲)1183-1191
ページ数9
ジャーナルIEEE Journal of Quantum Electronics
45
9
DOI
出版ステータスPublished - 2009 9
外部発表はい

ASJC Scopus subject areas

  • 原子分子物理学および光学
  • 凝縮系物理学
  • 電子工学および電気工学

フィンガープリント

「Successful application of the 8-band k·p theory to optical properties of highly strained In(Ga)As/InGaAs quantum wells with strong conduction-valence band coupling」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル