We grew single-crystalline Sr1-xLaxCuO2 thin films of electron-doped infinite-layer compounds by molecular beam epitaxy. Crucial to our success was the use of KTaO3 substrates. The best film showed Tconset=41.5 K and Tczero=39.0 K. The resistivity of the optimum-doped films exhibited metallic temperature dependence with a low resistivity of 320 μΩcm at room temperature and 120 μΩcm just above Tc. Such excellent electrical properties have not previously been reported for this system with either thin films or bulk polycrystalline specimens.
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