Superconductor-to-insulator transition in boron-doped diamond films grown using chemical vapor deposition

Akihiro Kawano, Hitoshi Ishiwata, Shingo Iriyama, Ryosuke Okada, Takahide Yamaguchi, Yoshihiko Takano, Hiroshi Kawarada

研究成果: Article査読

53 被引用数 (Scopus)

抄録

The critical concentration of superconductor-to-insulator transition in boron-doped diamond is determined in two ways, namely, the actual doping concentration of boron and the Hall carrier concentration. Hall carrier concentrations in (111) and (001) films exceed the actual doping concentration owing to the distortion of the Fermi surface. The high critical boron concentration in (110) films is owing to the effect of the high concentration of interstitial boron atoms. A boron concentration of 3× 1020 cm-3 in substitutional site is required for inducing superconductivity in diamond.

本文言語English
論文番号085318
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
82
8
DOI
出版ステータスPublished - 2010 8 16

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

フィンガープリント 「Superconductor-to-insulator transition in boron-doped diamond films grown using chemical vapor deposition」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル