Superconductor-to-insulator transition in boron-doped diamond films grown using chemical vapor deposition

Akihiro Kawano, Hitoshi Ishiwata, Shingo Iriyama, Ryosuke Okada, Takahide Yamaguchi, Yoshihiko Takano, Hiroshi Kawarada

研究成果: Article

50 引用 (Scopus)

抜粋

The critical concentration of superconductor-to-insulator transition in boron-doped diamond is determined in two ways, namely, the actual doping concentration of boron and the Hall carrier concentration. Hall carrier concentrations in (111) and (001) films exceed the actual doping concentration owing to the distortion of the Fermi surface. The high critical boron concentration in (110) films is owing to the effect of the high concentration of interstitial boron atoms. A boron concentration of 3× 1020 cm-3 in substitutional site is required for inducing superconductivity in diamond.

元の言語English
記事番号085318
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
82
発行部数8
DOI
出版物ステータスPublished - 2010 8 16

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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