Superconductor-to-insulator transition in boron-doped diamond films grown using chemical vapor deposition

Akihiro Kawano*, Hitoshi Ishiwata, Shingo Iriyama, Ryosuke Okada, Takahide Yamaguchi, Yoshihiko Takano, Hiroshi Kawarada

*この研究の対応する著者

研究成果: Article査読

61 被引用数 (Scopus)

抄録

The critical concentration of superconductor-to-insulator transition in boron-doped diamond is determined in two ways, namely, the actual doping concentration of boron and the Hall carrier concentration. Hall carrier concentrations in (111) and (001) films exceed the actual doping concentration owing to the distortion of the Fermi surface. The high critical boron concentration in (110) films is owing to the effect of the high concentration of interstitial boron atoms. A boron concentration of 3× 1020 cm-3 in substitutional site is required for inducing superconductivity in diamond.

本文言語English
論文番号085318
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
82
8
DOI
出版ステータスPublished - 2010 8月 16

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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