Superior suppression of gate current leakage in Al₂O ₃/Si₃N₄ bilayer-based AlGaN/GaN insulated gate heterostructure field-effect transistors

Engineering & Materials Science

• MOSFET devices 88%
• High electron mobility transistors 87%
• MIS devices 82%
• Leakage currents 81%
• Aluminum oxide 72%
• Semiconductor materials 56%
• Metals 40%
• Nitrides 30%
• Transconductance 30%
• Conduction bands 21%
• Permittivity 12%

Chemical Compounds

• Leakage Current 100%
• Field Effect 75%
• Transconductance 46%
• Nonconductor 34%
• Band Offset 24%
• Percent Reduction 17%
• Conduction Band 16%
• Nitride 14%
• Dielectric Constant 13%
• Length 9%
• Reduction 6%

Physics & Astronomy

• MIS (semiconductors) 85%
• leakage 62%
• field effect transistors 59%
• retarding 57%
• transconductance 20%
• nitrides 17%
• insulators 13%
• conduction bands 8%
• permittivity 6%