Suppression of current hysteresis in carbon nanotube thin-film transistors

Kazuhito Tsukagoshi*, Masahiro Sekiguchi, Yoshinobu Aoyagi, Takayoshi Kanbara, Taishi Takenobu, Yoshihiro Iwasa

*この研究の対応する著者

研究成果査読

8 被引用数 (Scopus)

抄録

Source-drain current hysteresis in carbon nanotube film transistors is effectively suppressed by a combination of ultraviolet/ ozone treatment and the thermal evaporation of a protective pentacene film. Thin-film channel transistors fabricated from single-walled carbon nanotubes contain amorphous carbon particles and molecules adsorbed from the atmosphere as charge-trapping sites. Ultraviolet irradiation under exposure to ozone is shown to be effective for eliminating amorphous carbon, and the evaporation of a pentacene layer prevents adsorption from the atmosphere. The combination of these treatments reduces hysteresis in carbon nanotube film transistors.

本文言語English
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
46
20-24
DOI
出版ステータスPublished - 2007 6 15
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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