抄録
Source-drain current hysteresis in carbon nanotube film transistors is effectively suppressed by a combination of ultraviolet/ ozone treatment and the thermal evaporation of a protective pentacene film. Thin-film channel transistors fabricated from single-walled carbon nanotubes contain amorphous carbon particles and molecules adsorbed from the atmosphere as charge-trapping sites. Ultraviolet irradiation under exposure to ozone is shown to be effective for eliminating amorphous carbon, and the evaporation of a pentacene layer prevents adsorption from the atmosphere. The combination of these treatments reduces hysteresis in carbon nanotube film transistors.
| 元の言語 | English |
|---|---|
| ジャーナル | Japanese Journal of Applied Physics, Part 2: Letters |
| 巻 | 46 |
| 発行部数 | 20-24 |
| DOI | |
| 出版物ステータス | Published - 2007 6 15 |
| 外部発表 | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
これを引用
Suppression of current hysteresis in carbon nanotube thin-film transistors. / Tsukagoshi, Kazuhito; Sekiguchi, Masahiro; Aoyagi, Yoshinobu; Kanbara, Takayoshi; Takenobu, Taishi; Iwasa, Yoshihiro.
：: Japanese Journal of Applied Physics, Part 2: Letters, 巻 46, 番号 20-24, 15.06.2007.研究成果: Article
}
TY - JOUR
T1 - Suppression of current hysteresis in carbon nanotube thin-film transistors
AU - Tsukagoshi, Kazuhito
AU - Sekiguchi, Masahiro
AU - Aoyagi, Yoshinobu
AU - Kanbara, Takayoshi
AU - Takenobu, Taishi
AU - Iwasa, Yoshihiro
PY - 2007/6/15
Y1 - 2007/6/15
N2 - Source-drain current hysteresis in carbon nanotube film transistors is effectively suppressed by a combination of ultraviolet/ ozone treatment and the thermal evaporation of a protective pentacene film. Thin-film channel transistors fabricated from single-walled carbon nanotubes contain amorphous carbon particles and molecules adsorbed from the atmosphere as charge-trapping sites. Ultraviolet irradiation under exposure to ozone is shown to be effective for eliminating amorphous carbon, and the evaporation of a pentacene layer prevents adsorption from the atmosphere. The combination of these treatments reduces hysteresis in carbon nanotube film transistors.
AB - Source-drain current hysteresis in carbon nanotube film transistors is effectively suppressed by a combination of ultraviolet/ ozone treatment and the thermal evaporation of a protective pentacene film. Thin-film channel transistors fabricated from single-walled carbon nanotubes contain amorphous carbon particles and molecules adsorbed from the atmosphere as charge-trapping sites. Ultraviolet irradiation under exposure to ozone is shown to be effective for eliminating amorphous carbon, and the evaporation of a pentacene layer prevents adsorption from the atmosphere. The combination of these treatments reduces hysteresis in carbon nanotube film transistors.
KW - Carbon nanotube
KW - Hysteresis
KW - Pentacene
KW - Thin-film transistor
KW - Trap
UR - http://www.scopus.com/inward/record.url?scp=34547828990&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34547828990&partnerID=8YFLogxK
U2 - 10.1143/JJAP.46.L571
DO - 10.1143/JJAP.46.L571
M3 - Article
AN - SCOPUS:34547828990
VL - 46
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 20-24
ER -