抄録
Source-drain current hysteresis in carbon nanotube film transistors is effectively suppressed by a combination of ultraviolet/ ozone treatment and the thermal evaporation of a protective pentacene film. Thin-film channel transistors fabricated from single-walled carbon nanotubes contain amorphous carbon particles and molecules adsorbed from the atmosphere as charge-trapping sites. Ultraviolet irradiation under exposure to ozone is shown to be effective for eliminating amorphous carbon, and the evaporation of a pentacene layer prevents adsorption from the atmosphere. The combination of these treatments reduces hysteresis in carbon nanotube film transistors.
本文言語 | English |
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ジャーナル | Japanese Journal of Applied Physics, Part 2: Letters |
巻 | 46 |
号 | 20-24 |
DOI | |
出版ステータス | Published - 2007 6月 15 |
外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学(その他)