The partial trench isolated (PTI) structure of SOI MOSFETs was studied using stress simulation and compared with the fully trench isolation (FTI) structure. The oxidation-induced stress during trench isolation process of the PTI structure was found to be lower than those of the FTI structure. This was because the oxidant diffusion to the SOI bottom surface was easily suppressed in the PTI SOI MOSFETs. The high yield drain leakage current characteristics of the PTI SOI MOSFETs were presented.
|出版ステータス||Published - 2000 12 1|
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