TY - JOUR
T1 - Surface Morphology and Electronic Properties of SnTe Films Prepared by Molecular Beam Epitaxy
AU - Su, Nan
AU - Tsuboi, Kaito
AU - Kobayashi, Shotaro
AU - Sugimoto, Kota
AU - Kobayashi, Masakazu
N1 - Funding Information:
This work was supported in part by a Waseda University Grant for Special Research Projects. The experiments were in part performed at the Joint Research Center for Environmentally Conscious Technologies in Materials Science (Grant Nos. JPMXP0618217637 and JPMXP0621467974) at ZAIKEN, Waseda University. The authors thank Edanz (https://jp.edanz.com/ac) for editing a draft of this manuscript.
Publisher Copyright:
© 2022 Wiley-VCH GmbH.
PY - 2022
Y1 - 2022
N2 - SnTe is receiving a lot of attention as a topological crystalline insulator. Herein, SnTe films are grown directly on GaAs (100) substrates by molecular beam epitaxy. The surface morphology and electronic properties are measured by atomic force microscopy and Hall effect measurement, respectively. Considering previous X-ray diffraction results, the samples grown with high beam-intensity ratios show hexagonal Te segregation in the films, which deteriorates the surface morphology and decreases the conductivity. By suppressing the supply of Te, better surface morphology and electrical properties are obtained.
AB - SnTe is receiving a lot of attention as a topological crystalline insulator. Herein, SnTe films are grown directly on GaAs (100) substrates by molecular beam epitaxy. The surface morphology and electronic properties are measured by atomic force microscopy and Hall effect measurement, respectively. Considering previous X-ray diffraction results, the samples grown with high beam-intensity ratios show hexagonal Te segregation in the films, which deteriorates the surface morphology and decreases the conductivity. By suppressing the supply of Te, better surface morphology and electrical properties are obtained.
KW - Hall effect measurement
KW - atomic force microscopy
KW - electronic properties
KW - molecular beam epitaxy
KW - surface morphology
KW - topological crystalline insulators
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U2 - 10.1002/pssa.202200555
DO - 10.1002/pssa.202200555
M3 - Article
AN - SCOPUS:85143723527
SN - 1862-6300
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
ER -