The surface order of a heterocpitaxial diamond (001) film grown on an inclined β-SiC(001) has been evaluated with a micro-electron beam in ultra-high-vacuum. It was determined that the range of order of surface dimer-rows of the heterocpitaxial diamond film is ∼15 Å.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版ステータス||Published - 2000|
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