Surface order evaluation of the heteroepitaxial diamond film grown on an inclined β-SiC(001)

Shozo Kono; Tadahiko Goto; Tadashi Abukawa; Christph Wild; Peter Koidl; Hiroshi Kawarada

doi:10.1143/jjap.39.4372

Surface order evaluation of the heteroepitaxial diamond film grown on an inclined β-SiC(001)

Shozo Kono^*, Tadahiko Goto, Tadashi Abukawa, Christph Wild, Peter Koidl, Hiroshi Kawarada

^*この研究の対応する著者

基幹理工学部

研究成果 › 査読

7 被引用数 (Scopus)

抄録

The surface order of a heterocpitaxial diamond (001) film grown on an inclined β-SiC(001) has been evaluated with a micro-electron beam in ultra-high-vacuum. It was determined that the range of order of surface dimer-rows of the heterocpitaxial diamond film is ∼15 Å.

本文言語	English
ページ（範囲）	4372-4373
ページ数	2
ジャーナル	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
巻	39
号	7 B
DOI	https://doi.org/10.1143/jjap.39.4372
出版ステータス	Published - 2000

ASJC Scopus subject areas

工学（全般）
物理学および天文学（全般）

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10.1143/jjap.39.4372

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abstract = "The surface order of a heterocpitaxial diamond (001) film grown on an inclined β-SiC(001) has been evaluated with a micro-electron beam in ultra-high-vacuum. It was determined that the range of order of surface dimer-rows of the heterocpitaxial diamond film is ∼15 {\AA}.",

keywords = "C(001), Diamond surface, Heteroepitaxial diamond film, Micro-electron beam RHEED, UHV-SEM",

author = "Shozo Kono and Tadahiko Goto and Tadashi Abukawa and Christph Wild and Peter Koidl and Hiroshi Kawarada",

year = "2000",

doi = "10.1143/jjap.39.4372",

language = "English",

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AU - Kono, Shozo

AU - Goto, Tadahiko

AU - Abukawa, Tadashi

AU - Wild, Christph

AU - Koidl, Peter

AU - Kawarada, Hiroshi

PY - 2000

Y1 - 2000

N2 - The surface order of a heterocpitaxial diamond (001) film grown on an inclined β-SiC(001) has been evaluated with a micro-electron beam in ultra-high-vacuum. It was determined that the range of order of surface dimer-rows of the heterocpitaxial diamond film is ∼15 Å.

AB - The surface order of a heterocpitaxial diamond (001) film grown on an inclined β-SiC(001) has been evaluated with a micro-electron beam in ultra-high-vacuum. It was determined that the range of order of surface dimer-rows of the heterocpitaxial diamond film is ∼15 Å.

KW - C(001)

KW - Diamond surface

KW - Heteroepitaxial diamond film

KW - Micro-electron beam RHEED

KW - UHV-SEM

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 7 B

ER -

Surface order evaluation of the heteroepitaxial diamond film grown on an inclined β-SiC(001)

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