抄録
The sub-initial oxidation of Si (111) surface by a high-flux pure ozone was investigated using X-ray photoelectron spectroscopy. In addition to the advantage of the pure ozone which can efficiently oxidize the Si surface at room temperature, the high-flux ozone was found to further enhance the oxidation. The possibility of producing negative ions of oxidizing gases using Rydberg electron transfer was also investigated.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 53-58 |
| ページ数 | 6 |
| ジャーナル | Materials Research Society Symposium - Proceedings |
| 巻 | 446 |
| 出版ステータス | Published - 1997 1月 1 |
| 外部発表 | はい |
| イベント | Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA 継続期間: 1996 12月 2 → 1996 12月 5 |
ASJC Scopus subject areas
- 材料科学（全般）
- 凝縮系物理学
- 材料力学
- 機械工学