Surface oxidation of Si(111) by high purity ozone and negative ions produced by Rydberg electron transfer

H. Nonaka; A. Kurokawa; K. Nakamura; S. Ichimura

Surface oxidation of Si(111) by high purity ozone and negative ions produced by Rydberg electron transfer

H. Nonaka, A. Kurokawa, K. Nakamura, S. Ichimura

研究成果: Conference article › 査読

抄録

The sub-initial oxidation of Si (111) surface by a high-flux pure ozone was investigated using X-ray photoelectron spectroscopy. In addition to the advantage of the pure ozone which can efficiently oxidize the Si surface at room temperature, the high-flux ozone was found to further enhance the oxidation. The possibility of producing negative ions of oxidizing gases using Rydberg electron transfer was also investigated.

本文言語	English
ページ（範囲）	53-58
ページ数	6
ジャーナル	Materials Research Society Symposium - Proceedings
巻	446
出版ステータス	Published - 1997 1 1
外部発表	はい
イベント	Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA 継続期間: 1996 12 2 → 1996 12 5

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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引用スタイル

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abstract = "The sub-initial oxidation of Si (111) surface by a high-flux pure ozone was investigated using X-ray photoelectron spectroscopy. In addition to the advantage of the pure ozone which can efficiently oxidize the Si surface at room temperature, the high-flux ozone was found to further enhance the oxidation. The possibility of producing negative ions of oxidizing gases using Rydberg electron transfer was also investigated.",

author = "H. Nonaka and A. Kurokawa and K. Nakamura and S. Ichimura",

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T1 - Surface oxidation of Si(111) by high purity ozone and negative ions produced by Rydberg electron transfer

AU - Nonaka, H.

AU - Kurokawa, A.

AU - Nakamura, K.

AU - Ichimura, S.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - The sub-initial oxidation of Si (111) surface by a high-flux pure ozone was investigated using X-ray photoelectron spectroscopy. In addition to the advantage of the pure ozone which can efficiently oxidize the Si surface at room temperature, the high-flux ozone was found to further enhance the oxidation. The possibility of producing negative ions of oxidizing gases using Rydberg electron transfer was also investigated.

AB - The sub-initial oxidation of Si (111) surface by a high-flux pure ozone was investigated using X-ray photoelectron spectroscopy. In addition to the advantage of the pure ozone which can efficiently oxidize the Si surface at room temperature, the high-flux ozone was found to further enhance the oxidation. The possibility of producing negative ions of oxidizing gases using Rydberg electron transfer was also investigated.

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JO - Materials Research Society Symposium - Proceedings

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T2 - Proceedings of the 1996 MRS Fall Meeting

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