The sub-initial oxidation of Si (111) surface by a high-flux pure ozone was investigated using X-ray photoelectron spectroscopy. In addition to the advantage of the pure ozone which can efficiently oxidize the Si surface at room temperature, the high-flux ozone was found to further enhance the oxidation. The possibility of producing negative ions of oxidizing gases using Rydberg electron transfer was also investigated.
|ジャーナル||Materials Research Society Symposium - Proceedings|
|出版ステータス||Published - 1997 1月 1|
|イベント||Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA|
継続期間: 1996 12月 2 → 1996 12月 5
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