Surface p-channel metal-oxide-semiconductor field effect transistors fabricated on hydrogen terminated (001) surfaces of diamond

A. Hokazono*, K. Tsugawa, H. Umezana, K. Kitatani, H. Kawarada

*この研究の対応する著者

研究成果: Conference article査読

21 被引用数 (Scopus)

抄録

Metal-oxide-semiconductor field effect transistors (MOSFETs) with a surface p-channel have been fabricated on hydrogen-terminated diamond (001) surfaces without doping. The maximum transconductance of the device with the gate length of 6 μm is 16 mS/mm, which is the highest in diamond MOSFETs and comparable to that of silicon n-channel MOSFET with the same gate length. The relatively high transconductance is due to the low density of surface states on hydrogen-terminated diamond. The diamond MOSFETs operate at the temperatures of up to 330°C in air without any passivation of the device surfaces.

本文言語English
ページ(範囲)1465-1471
ページ数7
ジャーナルSolid-State Electronics
43
8
DOI
出版ステータスPublished - 1999 8
イベントProceedings of the 1998 3rd Tropical Workshop on Heterostructure Microelectronics for Information Systems Applications (TWHM-ISA '98) - Hayama-Machi, Jpn
継続期間: 1998 8 301998 9 2

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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