TY - JOUR
T1 - Surface protrusions of chemical vapor deposited TiN films caused by Cu contamination of silicon substrates
AU - Cheng, D.
AU - Ogawa, Y.
AU - Hamamura, H.
AU - Shirakawa, H.
AU - Ohsawa, Toshio
AU - Takami, S.
AU - Komiyama, H.
PY - 1998
Y1 - 1998
N2 - We found that surface protrusions of chemical vapor deposited TiN films are caused by reactions between copper contaminants and the silicon substrate. Depending on the size of the copper contaminant, two kinds of defects were formed: copper silicide (CuSi) and silicon dioxide. The silicon dioxide is formed because of the catalytic role of copper silicide. The defects grow both into and out of the silicon substrate. In the formation of copper silicide and silicon dioxide, copper, silicon, and oxygen are the major participating species.
AB - We found that surface protrusions of chemical vapor deposited TiN films are caused by reactions between copper contaminants and the silicon substrate. Depending on the size of the copper contaminant, two kinds of defects were formed: copper silicide (CuSi) and silicon dioxide. The silicon dioxide is formed because of the catalytic role of copper silicide. The defects grow both into and out of the silicon substrate. In the formation of copper silicide and silicon dioxide, copper, silicon, and oxygen are the major participating species.
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M3 - Article
AN - SCOPUS:0032066131
SN - 0021-4922
VL - 37
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 5 B
ER -