Surface reaction mechanism in MOMBE-ALE of ZnSe and CdSe as determined by a new in-situ optical probing method

Akihiko Yoshikawa, Masakazu Kobayashi, Shigeru Tokita

研究成果: Article査読

11 被引用数 (Scopus)

抄録

The surface reaction mechanism in MOMBE-ALE of ZnSe and CdSe using DMZn, DMCd and H2Se as reactants has been studied with a newly developed optical in-situ monitoring method named surface photo-interference (SPI). It is shown that there is a quite significant difference in the surface reaction mechanism between the MOMBE-ALE of ZnSe and CdSe. That is, in the ALE of ZnSe when none of the source gases are pre-cracked, the reaction to form ZnSe can take place when the group-II source (i.e., DMZn) is supplied, resulting in an alternate appearance of Zn-terminated and H2Se-terminated surfaces during growth. On the other hand, the reaction to form CdSe can take place when a group-VI source (i.e., H2Se) is supplied, resulting in an alternate appearance of Se-terminated and DMCd-terminated surfaces during growth.

本文言語English
ページ(範囲)316-321
ページ数6
ジャーナルApplied Surface Science
82-83
C
DOI
出版ステータスPublished - 1994 12 2
外部発表はい

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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