We report a novel optical functional device, a symmetric triangular-barrier optoelectronic switch (S-TOPS), which consists of a symmetric n+-i-δp+-i-n+ structure of In0.53Ga0.47As, grown by a gas source molecular beam epitaxy (GSMBE). We fabricated the S-TOPS by changing the sheet-carrier concentration of the δp+ gate layer to introduce an avalanche multiplication for positive feedback in the operation. In the current vs. voltage characteristics of the S-TOPS under illumination of 1.55 μm wavelength light, we successfully confirmed a bipolar S-shaped negative differential resistance (NDR) characteristics on a certain range of sheet-carrier concentration of the δp+ gate layer. Clear latch characteristics in the input-light power vs. current characteristics were also obtained in both the positive and negative biased conditions. We found that it is very important to optimize the sheet-carrier concentration to fabricate the S-TOPS.
|ジャーナル||Journal of Crystal Growth|
|出版ステータス||Published - 1997 5月|
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