Synchrotron-radiation-stimulated desorption of O+ ions from an oxidized silicon surface

Michio Niwano, Hitoshi Katakura, Yuji Takakuwa, Nobuo Miyamoto, Atsushi Hiraiwa, Kunihiro Yagi

研究成果: Article査読

19 被引用数 (Scopus)

抄録

The photon-stimulated desorption of ions from a naturally oxidized Si(100) surface has been studied using synchrotron radiation (SR). For mass analysis of the PSD ions, the time-of-flight method was utilized. Desorption of O + ions is clearly observed on the surface during exposure to unmonochromatized SR in the vacuum ultraviolet (VUV) region. Si 2p core level photoemission measurements show that the photoemission peak corresponding to silicon oxide is reduced in intensity after exposure to the radiation. The present experimental results indicate the possibility of removing a thin SiO2 layer on a Si(100) surface at low temperatures by exposing the surface to SR in the VUV region.

本文言語English
ページ(範囲)1125-1127
ページ数3
ジャーナルApplied Physics Letters
56
12
DOI
出版ステータスPublished - 1990
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

フィンガープリント

「Synchrotron-radiation-stimulated desorption of O<sup>+</sup> ions from an oxidized silicon surface」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル