In order to synthesize metastable group-IV binary alloy semiconductor thin films on Si, Si(100) substrates were implanted with 17 keV C ions for Si1-yCy/Si and alternatively with 110 keV Sn ions for Si1-zSnz/Si. Subsequent ion-beam-induced epitaxial crystallization (IBIEC) with 400 keV Ar ions at 300-400°C has induced a good epitaxial growth up to the surface both for Si1-yCy/Si (y = 0.014 at peak concentration) and for Si1-zSnz/Si (z = 0.029 at peak concentration). X-ray diffraction measurements have shown a growth of Si1-yCy/Si with smaller tensile strain than for Si1-yCy/Si grown by solid phase epitaxial growth (SPEG) up to 650°C. Photoluminescence measurements have revealed properties of defect related to I1(Ar) line and G line emissions for IBIEC-grown Si1-yCy/Si samples. IBIEC has induced an incomplete crystalline growth and a loss of implanted Sn atoms for Si1-zSnz/Si (z = 0.086 at peak concentration).
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