Synthesis of SiC coating from SiO by a chemical vapor deposition (CVD) process

Norihiro Murakawa, Masanori Eguchi, Kohei Tatsumi

研究成果: Article査読

2 被引用数 (Scopus)

抄録

A new chemical vapor deposition process for coating SiC is proposed in which gaseous SiO and toluene vapor are reacted to generate SiC in the presence of iron oxide as a catalytic component. At a temperature of 1450°C, SiC can be formed substantially from gaseous SiO and toluene vapor only at positions of iron oxide deposition. When iron oxide is deposited as a coating on a substrate, SiC can also be formed as a coating on the substrate by calcinating at 1450°C while supplying gaseous SiO and toluene vapor. In this process, SiC coating of several tens μm in thickness is formed on the substrate, and fibrous material is also formed on the SiC coating. The fibrous material is composed of fibrous SiC as well as an Fe-containing spherical substance and can be easily removed mechanically from the SiC coating. This process for coating SiC is based on a vapor-liquid-solid mechanism.

本文言語English
ページ(範囲)85-87
ページ数3
ジャーナルJournal of the Ceramic Society of Japan
125
3
DOI
出版ステータスPublished - 2017 3

ASJC Scopus subject areas

  • Ceramics and Composites
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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