Synthesis of SiC layer on metal silicon from SiO by a chemical vapor deposition process

Norihiro Murakawa*, Tomonori Iizuka, Masanori Eguchi, Kohei Tatsumi

*この研究の対応する著者

研究成果: Article査読

抄録

A new process for forming an SiC layer is proposed in which a surface of metal silicon is exposed to gaseous SiO and a gaseous carbon compound at around 1400C, thereby an SiC layer is formed substantially only on the surface of metal silicon. The resulting SiC layer is of crystalline cubic SiC and a few tens m in thickness.We consider that the carbon of the SiC layer derives from the gaseous carbon compound and the gaseous SiO promotes the formation of the SiC layer, therefore this process for forming the SiC layer can be defined as one of chemical vapor deposition processes.

本文言語English
ページ(範囲)516-519
ページ数4
ジャーナルJournal of the Ceramic Society of Japan
125
6
DOI
出版ステータスPublished - 2017 6

ASJC Scopus subject areas

  • セラミックおよび複合材料
  • 化学 (全般)
  • 凝縮系物理学
  • 材料化学

フィンガープリント

「Synthesis of SiC layer on metal silicon from SiO by a chemical vapor deposition process」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル