抄録
We propose a method of systematically controlling carrier densities at the interface of transition metal oxide heterostructures without introducing disorders. By inserting nonpolar layers sandwiched by polar layers, continuous carrier doping into the interface can be realized. This method enables us to control total carrier density per unit cell systematically up to high values on the order of unity.
本文言語 | English |
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論文番号 | 034704 |
ジャーナル | journal of the physical society of japan |
巻 | 79 |
号 | 3 |
DOI | |
出版ステータス | Published - 2010 3月 |
外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学(全般)