Systematic control of doped carrier density without disorder at interface of oxide heterostructures

Motoaki Hirayama, Masatoshi Imada

研究成果: Article査読

4 被引用数 (Scopus)

抄録

We propose a method of systematically controlling carrier densities at the interface of transition metal oxide heterostructures without introducing disorders. By inserting nonpolar layers sandwiched by polar layers, continuous carrier doping into the interface can be realized. This method enables us to control total carrier density per unit cell systematically up to high values on the order of unity.

本文言語English
論文番号034704
ジャーナルjournal of the physical society of japan
79
3
DOI
出版ステータスPublished - 2010 3

ASJC Scopus subject areas

  • Physics and Astronomy(all)

フィンガープリント 「Systematic control of doped carrier density without disorder at interface of oxide heterostructures」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル