Systematic investigation of minority carrier diffusion length in n-and p-GaN for nitride heterojunction bipolar transistors

K. Kumakura, T. Makimoto, N. Kobayashi, T. Hashizume, T. Fukui, H. Hasegawa

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

In this paper, we have investigated the doping concentration and dislocation density dependence of minority carrier diffusion length parallel to c-axis in Si-doped and Mg-doped GaN by electron beam induced current (EBIC) measurements to optimize the base structure of nitride heterojunction bipolar transistors.

本文言語English
ホスト出版物のタイトル2003 International Symposium on Compound Semiconductors, ISCS 2003
出版社Institute of Electrical and Electronics Engineers Inc.
ページ49-50
ページ数2
ISBN(電子版)0780378202
DOI
出版ステータスPublished - 2003
イベント2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States
継続期間: 2003 8 252003 8 27

出版物シリーズ

名前IEEE International Symposium on Compound Semiconductors, Proceedings
2003-January

Other

Other2003 International Symposium on Compound Semiconductors, ISCS 2003
CountryUnited States
CitySan Diego
Period03/8/2503/8/27

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

フィンガープリント 「Systematic investigation of minority carrier diffusion length in n-and p-GaN for nitride heterojunction bipolar transistors」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル