Systematic study of insulator deposition effect (Si3N 4, SiO2, AlN, and Al2O3) on electrical properties in AlGaN/GaN heterostructures
Narihiko Maeda*, Masanobu Hiroki, Noriyuki Watanabe, Yasuhiro Oda, Haruki Yokoyama, Takuma Yagi, Toshiki Makimoto, Takatomo Enoki, Takashi Kobayashi
*この研究の対応する著者
研究成果: Article › 査読
70
被引用数
(Scopus)