TEM analysis of grain boundaries in SrTiO 3-based semiconductor ceramics

Shigeki Shibagaki, Kazuhito Kamei

研究成果: Article査読

抄録

Structures of grain boundaries of SrTiO 3 semiconductive capacitor have not been fully elucidated. Several studies were focused on the SrTiO 3 systems which include additives, such as, Al 2O 3 or SiO 2. In this study, we first investigated the grain boundaries of Sr 0.975Ca 0.025TiNb 0.004O 3 which did not contain any additives. Then Bi 2O 3/CuO, which is a grain boundary modifier, was also added in order to investigate the process that changes grain boundaries into insulators. Samples heat-treated with Bi 2O 3/CuO were quenched in water and TEM (transmission electron microscopy) was carried out on these microstructures. Grain boundaries of samples sintered in a reduced atmosphere showed segregation of TiO 2 oxide phase, which included no traces of Sr. On the other hand, in grain boundaries of samples heat-treated with the Bi 2O 3/CuO agent, at least two phases existed. One phase included large amounts of Bi and Cu, while the other phase showed only traces of these elements. Near the grain boundaries Bi and Cu diffused into the matrix grains showing inhomogeneous diffusion of which diffusion lengths were different at each side of the grain boundary and seemingly lattice coincident with both grain boundary layers and matrix grains. In addition, steps of about 2 nm in height were observed at grain boundaries.

本文言語English
ページ(範囲)666-672
ページ数7
ジャーナルNippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan
108
7
出版ステータスPublished - 2000
外部発表はい

ASJC Scopus subject areas

  • セラミックおよび複合材料

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