TEM studies on the initial stage of seeded solution growth of 6H-SiC using metal solvent

K. Kamei*, K. Kusunoki, S. Munetoh, T. Ujihara, K. Nakajima

*この研究の対応する著者

研究成果: Article査読

2 被引用数 (Scopus)

抄録

TEM characterization was carried out on the epitaxial interface formed by seeded solution growth of 6H-SiC using metal solvents such as Ti and Mn. The penetration of the solution into the micropipes and its solidification behavior were clearly observed. Although stacking faults are introduced in the vicinity of micropipes during the solidification, it decreases as the growth proceeds. The micropipes are terminated by the lateral overgrowth of epitaxial SiC layer. The crystallinity of 6H-SiC obtained from Si-Ti-C solution is much better than that obtained from Si-Mn-C solution.

本文言語English
ページ(範囲)347-350
ページ数4
ジャーナルMaterials Science Forum
457-460
I
出版ステータスPublished - 2004
外部発表はい

ASJC Scopus subject areas

  • 材料科学(全般)

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