TEM study of the interface of anodic-bonded Si/glass

Q. F. Xing, Makoto Yoshida, G. Sasaki

研究成果: Article

26 引用 (Scopus)

抄録

Transmission electron microscopy (TEM) was used to study the interfacial microstructures of anodic-bonded Si/glass. The anodic bonding mechanism, in which oxygen diffused into silicon from a sodium-depleted region, was analyzed. Amorphous silicon oxide was formed during diffusion that accounted for the bond formation. The ion-migrating processes within the sodium-depleted region was found to be complicated.

元の言語English
ページ(範囲)577-582
ページ数6
ジャーナルScripta Materialia
47
発行部数9
DOI
出版物ステータスPublished - 2002 11 1
外部発表Yes

Fingerprint

Sodium
sodium
Transmission electron microscopy
Glass
transmission electron microscopy
glass
Silicon oxides
Silicon
Amorphous silicon
silicon oxides
amorphous silicon
Ions
Oxygen
microstructure
Microstructure
silicon
oxygen
ions

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Metals and Alloys

これを引用

TEM study of the interface of anodic-bonded Si/glass. / Xing, Q. F.; Yoshida, Makoto; Sasaki, G.

:: Scripta Materialia, 巻 47, 番号 9, 01.11.2002, p. 577-582.

研究成果: Article

Xing, Q. F. ; Yoshida, Makoto ; Sasaki, G. / TEM study of the interface of anodic-bonded Si/glass. :: Scripta Materialia. 2002 ; 巻 47, 番号 9. pp. 577-582.
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