Temperature Characteristics of 1.3-μm Membrane Lasers on InP-on-Insulator Substrate

Takuro Fujii, Hidetaka Nishi, Koji Takeda, Erina Kanno, Koichi Hasebe, Tomonari Sato, Takaaki Kakitsuka, Hiroshi Fukuda, Tai Tsuchizawa, Shinji Matsuo

研究成果: Conference contribution

1 引用 (Scopus)

抄録

We have developed energy-efficient 1.3-μm membrane lasers on Si for datacom applications. We employ InGaAlAs-based MQWs as an active material to improve the temperature characteristics and modulation speed. We achieved lasing at up to 95°C and direct modulation up to 40-Gbit/s at 25°C.

元の言語English
ホスト出版物のタイトル26th International Semiconductor Laser Conference, ISLC 2018
出版者Institute of Electrical and Electronics Engineers Inc.
ページ87-88
ページ数2
ISBN(電子版)9781538664865
DOI
出版物ステータスPublished - 2018 10 30
外部発表Yes
イベント26th International Semiconductor Laser Conference, ISLC 2018 - Santa Fe, United States
継続期間: 2018 9 162018 9 19

出版物シリーズ

名前Conference Digest - IEEE International Semiconductor Laser Conference
2018-September
ISSN(印刷物)0899-9406

Other

Other26th International Semiconductor Laser Conference, ISLC 2018
United States
Santa Fe
期間18/9/1618/9/19

Fingerprint

Modulation
insulators
membranes
Membranes
modulation
Lasers
Substrates
lasers
lasing
Temperature
temperature
energy

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

これを引用

Fujii, T., Nishi, H., Takeda, K., Kanno, E., Hasebe, K., Sato, T., ... Matsuo, S. (2018). Temperature Characteristics of 1.3-μm Membrane Lasers on InP-on-Insulator Substrate. : 26th International Semiconductor Laser Conference, ISLC 2018 (pp. 87-88). [8516179] (Conference Digest - IEEE International Semiconductor Laser Conference; 巻数 2018-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISLC.2018.8516179

Temperature Characteristics of 1.3-μm Membrane Lasers on InP-on-Insulator Substrate. / Fujii, Takuro; Nishi, Hidetaka; Takeda, Koji; Kanno, Erina; Hasebe, Koichi; Sato, Tomonari; Kakitsuka, Takaaki; Fukuda, Hiroshi; Tsuchizawa, Tai; Matsuo, Shinji.

26th International Semiconductor Laser Conference, ISLC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 87-88 8516179 (Conference Digest - IEEE International Semiconductor Laser Conference; 巻 2018-September).

研究成果: Conference contribution

Fujii, T, Nishi, H, Takeda, K, Kanno, E, Hasebe, K, Sato, T, Kakitsuka, T, Fukuda, H, Tsuchizawa, T & Matsuo, S 2018, Temperature Characteristics of 1.3-μm Membrane Lasers on InP-on-Insulator Substrate. : 26th International Semiconductor Laser Conference, ISLC 2018., 8516179, Conference Digest - IEEE International Semiconductor Laser Conference, 巻. 2018-September, Institute of Electrical and Electronics Engineers Inc., pp. 87-88, 26th International Semiconductor Laser Conference, ISLC 2018, Santa Fe, United States, 18/9/16. https://doi.org/10.1109/ISLC.2018.8516179
Fujii T, Nishi H, Takeda K, Kanno E, Hasebe K, Sato T その他. Temperature Characteristics of 1.3-μm Membrane Lasers on InP-on-Insulator Substrate. : 26th International Semiconductor Laser Conference, ISLC 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 87-88. 8516179. (Conference Digest - IEEE International Semiconductor Laser Conference). https://doi.org/10.1109/ISLC.2018.8516179
Fujii, Takuro ; Nishi, Hidetaka ; Takeda, Koji ; Kanno, Erina ; Hasebe, Koichi ; Sato, Tomonari ; Kakitsuka, Takaaki ; Fukuda, Hiroshi ; Tsuchizawa, Tai ; Matsuo, Shinji. / Temperature Characteristics of 1.3-μm Membrane Lasers on InP-on-Insulator Substrate. 26th International Semiconductor Laser Conference, ISLC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 87-88 (Conference Digest - IEEE International Semiconductor Laser Conference).
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AU - Sato, Tomonari

AU - Kakitsuka, Takaaki

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