Temperature dependence and input optical power tolerance of an InGaAsP electroabsorption modulator module

H. Tanaka, M. Horita, Yuichi Matsushima, Y. Takahashi

研究成果: Article査読

8 被引用数 (Scopus)

抄録

We report the temperature dependence and input optical power tolerance of an InGaAsP electroabsorption (EA) modulator module. Thermal stability of the module was found to be very high. The optimum ΔEg at 20°C has been estimated to be 48-55 meV. At ΔEg of 53meV, the insertion loss was almost independent of the temperature, while the driving voltage was strongly dependent on the temperature. The breakdown phenomena were investigated in detail; these occurred under conditions of very high input power and/or high bias voltage. Input power for breakdown was smaller for higher bias voltage or smaller ΔEg. Allowable maximum input optical power has a large margin (>5dB) for the conventional input level in practical systems.

本文言語English
ページ(範囲)605-612
ページ数8
ジャーナルOptical and Quantum Electronics
28
5
出版ステータスPublished - 1996
外部発表はい

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 原子分子物理学および光学

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