Temperature dependence of current-voltage characteristics of npn -type GaNInGaN double heterojunction bipolar transistors

Atsushi Nishikawa*, Kazuhide Kumakura, Toshiki Makimoto

*この研究の対応する著者

研究成果: Article査読

7 被引用数 (Scopus)

抄録

We investigated the temperature dependence of the common-emitter current-voltage (I-V) characteristics of npn -type GaNInGaN double heterojunction bipolar transistors. Although the current gain decreases with increasing measurement temperature, the current gain measured at 300 °C is still as high as 308. The reduction of the current gain with temperature is attributed not only to the hole back-injection current from the base into the emitter but also to the shorter minority carrier diffusion length due to the increase in the carrier concentration of the p-InGaN base.

本文言語English
論文番号133514
ジャーナルApplied Physics Letters
91
13
DOI
出版ステータスPublished - 2007
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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