Temperature dependence of InGaAsP electro-absorption modulator module

Hideaki Tanaka*, Masayoshi Horita, Yuichi Matsushima

*この研究の対応する著者

研究成果: Conference contribution

4 被引用数 (Scopus)

抄録

The InGaAsP electro-absorption (EA) modulator is superior to other types of EA modulators in terms of small polarization dependence, high extinction ratio and a wide operation wavelength. The temperature and wavelength dependence of the insertion loss and the driving voltage of the module are presented. The controllability of the driving voltage is demonstrated by changing the module temperature. The optimum ΔEg at 20 °C is estimated to be 48 to approximately 55 meV, in consideration of small insertion loss and low driving voltage.

本文言語English
ホスト出版物のタイトルConference Proceedings - International Conference on Indium Phosphide and Related Materials
出版社IEEE
ページ540-543
ページ数4
出版ステータスPublished - 1995
外部発表はい
イベントProceedings of the 7th International Conference on Indium Phosphide and Related Materials - Sapporo, Jpn
継続期間: 1995 5 91995 5 13

Other

OtherProceedings of the 7th International Conference on Indium Phosphide and Related Materials
CitySapporo, Jpn
Period95/5/995/5/13

ASJC Scopus subject areas

  • 材料科学(全般)
  • 物理学および天文学(全般)

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