Temperature dependence of mobility and Hall coefficient factor for holes of highly pure silicon

K. Takeda, K. Sakui, M. Sakata

研究成果: Article査読

15 被引用数 (Scopus)

抄録

Considering the warping, the non-parabolicity of equienergy surfaces and the existence of three sub-band holes, the authors calculated the mobility and Hall coefficient factor of holes in highly pure silicon. The interaction between sub-bands in the valence band of silicon gives the complicated temperature dependence for the hole mobility. The simple band as the DKK model was seen to be applicable only below 10K. Over 10K one should consider the effect of the interaction of sub-bands. Over 100K the contribution of the optical phonon scattering becomes considerable, which lowers the value of the mobility.

本文言語English
論文番号022
ページ(範囲)767-776
ページ数10
ジャーナルJournal of Physics C: Solid State Physics
15
4
DOI
出版ステータスPublished - 1982 12 1
外部発表はい

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Engineering(all)
  • Physics and Astronomy(all)

フィンガープリント 「Temperature dependence of mobility and Hall coefficient factor for holes of highly pure silicon」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル