Temperature dependence of photoluminescence decay time in tunneling bi-quantum-well structures

Yoshihiro Sugiyama, Atsushi Tackeuchi, Tsuguo Inata, Sunichi Muto

研究成果: Article査読

8 被引用数 (Scopus)

抄録

We studied the nonresonant electron tunneling time in tunneling bi-quantum-well structures with a pump-probe photoluminescence (PL) system using optical mixing. The PL decay time of narrow wells for an AlxGa1-x As (*=0.51) barrier of 4.0 nm, determined by tunneling, decreases from 40 ps to 24 ps as the temperature increases from 6 K to 132 K. We attribute this to electrons in an exciton state thermalizing into free electrons having a faster tunneling rate.

本文言語English
ページ(範囲)L1454-L1457
ジャーナルJapanese journal of applied physics
30
8
DOI
出版ステータスPublished - 1991 8
外部発表はい

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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