Temperature dependence of strain in ZnSe(epilayer)/GaAs(epilayer)

R. J. Thomas*, Benjamin Rockwell, H. R. Chandrasekhar, Meera Chandrasekhar, A. K. Ramdas, M. Kobayashi, R. L. Gunshor

*この研究の対応する著者

研究成果: Article査読

16 被引用数 (Scopus)

抄録

A study of biaxial strain as a function of temperature in a ZnSe epilayer grown on a GaAs substrate is presented. The strains are determined by measuring the heavy- and light-hole related excitonic transitions via photomodulated spectroscopy. The strain is found to increase with increasing temperature. The data are compared with a calculation using a previously determined elastic constant and thermal expansion coefficients. The temperature dependence determined here allows a comparison of various other optical measurements performed at different temperatures.

本文言語English
ページ(範囲)6569-6573
ページ数5
ジャーナルJournal of Applied Physics
78
11
DOI
出版ステータスPublished - 1995
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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