Temperature dependence of the band gap in InAs_yP_1-y

The temperature dependence of the band gap in InAs_yP_1-y (y=0-0.67) has been determined by photoluminescence, x-ray diffraction, and absorption spectra measurements. We found that the measured data within the temperature range of 77-300 K can be expressed by the equation proposed by O'Donnell and Chen. The band gap at 77 K is given by E_g = 1.407 - 1.073y + 0.089y², while the compositional dependence of the band gap observed at 300 K, agrees with the values previously reported. We confirmed that changes in temperature caused a slight change in the bowing parameters, and hence found that the band gap temperature dependence of InAs_yP_1-y (y=0-1) varies very little with changes in composition (2.5-3.5 × 10^-4 eV/K).