The temperature dependence of the lifetime of 4.3-eV photoluminescence (PL) excited by three PL excitation bands in oxygen-deficient amorphous silica has been investigated in the range of 13–280 K. When the PL is excited at the 5.0- or 6.7-eV band, it decays single exponentially with a constant lifetime of about 4 ns irrespective of temperature. On the other hand, PL excited at 7.3 eV decays nonexponentially, and its effective lifetime monotonically decreases with an increase in temperature. Such a temperature dependence of the PL lifetime is explained by assuming an energy diagram involving two configurations of the oxygen-deficient defect.
|ジャーナル||Physical Review B - Condensed Matter and Materials Physics|
|出版ステータス||Published - 1999|
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