Temperature dependence of the lifetime of 4.3-ev photoluminescence in oxygen-deficient amorphous (formula presented)

Kwang Soo Seol, Makoto Fujimaki, Yoshimichi Ohki

研究成果: Article査読

21 被引用数 (Scopus)

抄録

The temperature dependence of the lifetime of 4.3-eV photoluminescence (PL) excited by three PL excitation bands in oxygen-deficient amorphous silica has been investigated in the range of 13–280 K. When the PL is excited at the 5.0- or 6.7-eV band, it decays single exponentially with a constant lifetime of about 4 ns irrespective of temperature. On the other hand, PL excited at 7.3 eV decays nonexponentially, and its effective lifetime monotonically decreases with an increase in temperature. Such a temperature dependence of the PL lifetime is explained by assuming an energy diagram involving two configurations of the oxygen-deficient defect.

本文言語English
ページ(範囲)1590-1593
ページ数4
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
59
3
DOI
出版ステータスPublished - 1999

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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