A temporary wafer bonding of SiC-SiC compatible with rapid thermal annealing at ∼1000 °C has been developed. An intermediate Ni nano-layer was employed to realize a strong and seamless bonding of two SiC wafers at room temperature without additional pressure. By the rapid thermal annealing process, the interface strength was remarkably decreased and the de-bonding could be achieved at the annealed interface. Interface analyses were carried out to investigate the mechanisms of both bonding and de-bonding. Further development of this temporary bonding technology is expected to be able to make the fabrication of thin SiC device compatible with the common rapid thermal annealing process.