Temporary SiC-SiC wafer bonding compatible with high temperature annealing

Fengwen Mu, Tadatomo Suga, Miyuki Uomoto, Takehito Shimatsu

研究成果: Conference contribution

抄録

A temporary wafer bonding of SiC-SiC compatible with rapid thermal annealing at ∼1000 °C has been developed. An intermediate Ni nano-layer was employed to realize a strong and seamless bonding of two SiC wafers at room temperature without additional pressure. By the rapid thermal annealing process, the interface strength was remarkably decreased and the de-bonding could be achieved at the annealed interface. Interface analyses were carried out to investigate the mechanisms of both bonding and de-bonding. Further development of this temporary bonding technology is expected to be able to make the fabrication of thin SiC device compatible with the common rapid thermal annealing process.

本文言語English
ホスト出版物のタイトルProceedings - IEEE 69th Electronic Components and Technology Conference, ECTC 2019
出版社Institute of Electrical and Electronics Engineers Inc.
ページ989-994
ページ数6
ISBN(電子版)9781728114989
DOI
出版ステータスPublished - 2019 5 1
イベント69th IEEE Electronic Components and Technology Conference, ECTC 2019 - Las Vegas, United States
継続期間: 2019 5 282019 5 31

出版物シリーズ

名前Proceedings - Electronic Components and Technology Conference
2019-May
ISSN(印刷版)0569-5503

Conference

Conference69th IEEE Electronic Components and Technology Conference, ECTC 2019
国/地域United States
CityLas Vegas
Period19/5/2819/5/31

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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