Ten years progress of electrical detection of heavy metal ions (Hmis) using various field-effect transistor (fet) nanosensors: A review

Shaili Falina, Mohd Syamsul*, Nuha Abd Rhaffor, Sofiyah Sal Hamid, Khairu Anuar Mohamed Zain, Asrulnizam Abd Manaf, Hiroshi Kawarada

*この研究の対応する著者

研究成果: Review article査読

1 被引用数 (Scopus)

抄録

Heavy metal pollution remains a major concern for the public today, in line with the growing population and global industrialization. Heavy metal ion (HMI) is a threat to human and environmental safety, even at low concentrations, thus rapid and continuous HMI monitoring is essential. Among the sensors available for HMI detection, the field-effect transistor (FET) sensor demonstrates promising potential for fast and real-time detection. The aim of this review is to provide a condensed overview of the contribution of certain semiconductor substrates in the development of chemical and biosensor FETs for HMI detection in the past decade. A brief introduction of the FET sensor along with its construction and configuration is presented in the first part of this review. Subsequently, the FET sensor deployment issue and FET intrinsic limitation screening effect are also discussed, and the solutions to overcome these shortcomings are summarized. Later, we summarize the strategies for HMIs’ electrical detection, mechanisms, and sensing performance on nanomaterial semiconductor FET transducers, including silicon, carbon nanotubes, graphene, AlGaN/GaN, transition metal dichalcogenides (TMD), black phosphorus, organic and inorganic semiconductor. Finally, concerns and suggestions regarding detection in the real samples using FET sensors are highlighted in the conclusion.

本文言語English
論文番号478
ジャーナルBiosensors
11
12
DOI
出版ステータスPublished - 2021 12月

ASJC Scopus subject areas

  • 臨床生化学

フィンガープリント

「Ten years progress of electrical detection of heavy metal ions (Hmis) using various field-effect transistor (fet) nanosensors: A review」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル