Tensor evaluation of stress relaxation profile in strained SiGe nanostructures on Si substrate

M. Tomita, D. Kosemura, K. Usuda, A. Ogura

研究成果: Conference contribution

4 被引用数 (Scopus)

抄録

A strained SiGe layer will be used in next-generation transistors to improve device performance along with device scaling. However, the stress relaxation of SiGe layer may be inevitable in nanodevices, because the SiGe layer is processed into nanostructure. In this study, we evaluated the stress relaxation profiles in mesa-shaped strained SiGe layers on Si substrate by electron back scattering pattern (EBSP), super-resolution Raman spectroscopy (SRRS) measurements, and finite element method (FEM) simulation. As a result, the stress relaxation profile with high spatial resolution was obtained by SRRS and EBSP measurements. The precise shear stress profiles were also obtained by EBSP measurement. Moreover, these stress profiles were reproduced by FEM simulation. The spatial resolution of EBSP and SRRS were estimated less than 100 nm. Thus, it is prospective to evaluate the precise stress relaxation profile in the sub-100 nm order devices by EBSP and SRRS measurements, respectively.

本文言語English
ホスト出版物のタイトルGraphene, Ge/III-V, and Emerging Materials for Post CMOS Applications 5
ページ207-214
ページ数8
1
DOI
出版ステータスPublished - 2013 10 21
外部発表はい
イベント5th International Symposium on Graphene, Ge/III-V and Emerging Materials For Post-CMOS Applications - 223rd ECS Meeting - Toronto, ON, Canada
継続期間: 2013 5 122013 5 17

出版物シリーズ

名前ECS Transactions
番号1
53
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

Other5th International Symposium on Graphene, Ge/III-V and Emerging Materials For Post-CMOS Applications - 223rd ECS Meeting
CountryCanada
CityToronto, ON
Period13/5/1213/5/17

ASJC Scopus subject areas

  • Engineering(all)

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