Thin Silicon films were deposited on non-crystal quartz glass substrates by hydrogen reduction of Si2Cl6 at temperatures from 650 to 900 °C in a horizontal hot wall reactor. The microstructures of the thin silicon films deposited under various experimental conditions were analyzed. The thin silicon films deposited from 750 to 850 °C have the highest degree of preferred (220) plane orientation with the 〈111〉 direction along the plane, and the cross-sectional morphology exhibits a columnar structure. The experimental values of the lattice spacing approach a value cited in JCPDS for the films deposited in a higher temperature range. In the lower temperature range the morphology of surface is flat and smooth, and in the higher temperature range the surface becomes uneven remarkably.
|ジャーナル||Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals|
|出版ステータス||Published - 1996 8月|
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