The 1200 nm-Band InAs/GaAs Quantum Dot Intermixing by Dry Etching and Ion Implantation

Yu Hiraishi*, Tomohiro Shirai, Jinkwan Kwoen, Taisei Ito, Yuichi Matsushima, Hiroshi Ishikawa, Yasuhiko Arakawa, Katsuyuki Utaka

*この研究の対応する著者

研究成果: Article査読

抄録

In this article, the quantum dot intermixing (QDI) technique previously developed for 1550 nm-band InAs/InAlGaAs QD is applied to 1200 nm-band InAs/GaAs QD. Three methods of defect introduction for triggering the QDI are used such as inductively coupled plasma reactive ion etching (ICP-RIE) (Ar+) and ion implantation (Ar+ and B+). As a result, about 80 nm photoluminescence (PL) peak wavelength shift is obtained for ICP-RIE when annealing is performed at 575 °C, after etching down to 450 nm to the QD layer. On the contrary, about 110 nm PL peak wavelength shift is obtained for B+ ion implantation at an acceleration energy of 120 keV and a dose of 1.0 × 1014 cm−2 and subsequent annealing. Cross-sectional image analyses by scanning transmission electron microscope (STEM) and energy-dispersive X-ray spectroscopy (EDX) clarified the modification of InAs QD structures by the QDI process.

本文言語English
論文番号1900851
ジャーナルPhysica Status Solidi (A) Applications and Materials Science
217
10
DOI
出版ステータスPublished - 2020 5 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜
  • 電子工学および電気工学
  • 材料化学

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