The characterization of SiC hot-implanted with Ga+

Y. Tanaka*, Naoto Kobayashi, M. Hasegawa, S. Yoshida, Y. Ishida, T. Nishijima, N. Hayashi

*この研究の対応する著者

研究成果: Article査読

6 被引用数 (Scopus)

抄録

In this study, we investigated the effect of the hot and multiple energy implantation technique for Ga+ ions in 3C-, 6H- and 4H-SiC substrates by Rutherford backscattering spectrometry and channeling technique (RBS-C). We found that the layers implanted at 500°C exhibit a good crystalline quality in spite of the presence of some residual defects originating from the implantation-induced damages and a large percentage of Ga atoms were observed to occupy the substitutional lattice sites independent of the polytype. This tendency becomes more pronounced by using the multiple energy implantation technique.

本文言語English
ページ(範囲)713-716
ページ数4
ジャーナルMaterials Science Forum
264-268
PART 2
出版ステータスPublished - 1998
外部発表はい

ASJC Scopus subject areas

  • 材料科学(全般)

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