The dependence of the characteristic temperature of highly stacked InAs quantum dot laser diodes fabricated using a strain-compensation technique on stacking layer number

Kouichi Akahane; Naokatsu Yamamoto; Tetsuya Kawanishi

doi:10.1109/ISLC.2012.6348369

The dependence of the characteristic temperature of highly stacked InAs quantum dot laser diodes fabricated using a strain-compensation technique on stacking layer number

Kouichi Akahane^*, Naokatsu Yamamoto, Tetsuya Kawanishi

^*この研究の対応する著者

研究成果: Conference article › 査読

4 被引用数 (Scopus)

抄録

We fabricated laser diodes containing highly stacked InAs quantum dots using the strain compensation technique. We analyzed the characteristic temperature and found that it increased with increasing number of stacking layers.

本文言語	English
論文番号	6348369
ページ（範囲）	82-83
ページ数	2
ジャーナル	Conference Digest - IEEE International Semiconductor Laser Conference
DOI	https://doi.org/10.1109/ISLC.2012.6348369
出版ステータス	Published - 2012 12月 11
外部発表	はい
イベント	23rd IEEE International Semiconductor Laser Conference, ISLC 2012 - San Diego, CA, United States 継続期間: 2012 10月 7 → 2012 10月 10

ASJC Scopus subject areas

原子分子物理学および光学
電子工学および電気工学

文献へのアクセス

10.1109/ISLC.2012.6348369

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引用スタイル

The dependence of the characteristic temperature of highly stacked InAs quantum dot laser diodes fabricated using a strain-compensation technique on stacking layer number. / Akahane, Kouichi; Yamamoto, Naokatsu; Kawanishi, Tetsuya.

In: Conference Digest - IEEE International Semiconductor Laser Conference, 11.12.2012, p. 82-83.

研究成果: Conference article › 査読

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