The dependence of the characteristic temperature of highly stacked InAs quantum dot laser diodes fabricated using a strain-compensation technique on stacking layer number

Kouichi Akahane; Naokatsu Yamamoto; Tetsuya Kawanishi

doi:10.1109/ISLC.2012.6348369

The dependence of the characteristic temperature of highly stacked InAs quantum dot laser diodes fabricated using a strain-compensation technique on stacking layer number

Kouichi Akahane^*, Naokatsu Yamamoto, Tetsuya Kawanishi

^*この研究の対応する著者

研究成果: Conference article › 査読

4 被引用数 (Scopus)

抄録

We fabricated laser diodes containing highly stacked InAs quantum dots using the strain compensation technique. We analyzed the characteristic temperature and found that it increased with increasing number of stacking layers.

本文言語	English
論文番号	6348369
ページ（範囲）	82-83
ページ数	2
ジャーナル	Conference Digest - IEEE International Semiconductor Laser Conference
DOI	https://doi.org/10.1109/ISLC.2012.6348369
出版ステータス	Published - 2012 12 11
外部発表	はい
イベント	23rd IEEE International Semiconductor Laser Conference, ISLC 2012 - San Diego, CA, United States 継続期間: 2012 10 7 → 2012 10 10

ASJC Scopus subject areas

原子分子物理学および光学
電子工学および電気工学

文献へのアクセス

10.1109/ISLC.2012.6348369

他のファイルとリンク

フィンガープリント

「The dependence of the characteristic temperature of highly stacked InAs quantum dot laser diodes fabricated using a strain-compensation technique on stacking layer number」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル

The dependence of the characteristic temperature of highly stacked InAs quantum dot laser diodes fabricated using a strain-compensation technique on stacking layer number. / Akahane, Kouichi; Yamamoto, Naokatsu; Kawanishi, Tetsuya.

In: Conference Digest - IEEE International Semiconductor Laser Conference, 11.12.2012, p. 82-83.

研究成果: Conference article › 査読

@article{dd29a5c07a68462fad9d367f1a141fda,

title = "The dependence of the characteristic temperature of highly stacked InAs quantum dot laser diodes fabricated using a strain-compensation technique on stacking layer number",

abstract = "We fabricated laser diodes containing highly stacked InAs quantum dots using the strain compensation technique. We analyzed the characteristic temperature and found that it increased with increasing number of stacking layers.",

keywords = "highly stacking, quantum dot, semiconductor laser, strain-compensation",

author = "Kouichi Akahane and Naokatsu Yamamoto and Tetsuya Kawanishi",

year = "2012",

month = dec,

day = "11",

doi = "10.1109/ISLC.2012.6348369",

language = "English",

pages = "82--83",

journal = "Conference Digest - IEEE International Semiconductor Laser Conference",

issn = "0899-9406",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "23rd IEEE International Semiconductor Laser Conference, ISLC 2012 ; Conference date: 07-10-2012 Through 10-10-2012",

}

TY - JOUR

T1 - The dependence of the characteristic temperature of highly stacked InAs quantum dot laser diodes fabricated using a strain-compensation technique on stacking layer number

AU - Akahane, Kouichi

AU - Yamamoto, Naokatsu

AU - Kawanishi, Tetsuya

PY - 2012/12/11

Y1 - 2012/12/11

N2 - We fabricated laser diodes containing highly stacked InAs quantum dots using the strain compensation technique. We analyzed the characteristic temperature and found that it increased with increasing number of stacking layers.

AB - We fabricated laser diodes containing highly stacked InAs quantum dots using the strain compensation technique. We analyzed the characteristic temperature and found that it increased with increasing number of stacking layers.

KW - highly stacking

KW - quantum dot

KW - semiconductor laser

KW - strain-compensation

UR - http://www.scopus.com/inward/record.url?scp=84870607422&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84870607422&partnerID=8YFLogxK

U2 - 10.1109/ISLC.2012.6348369

DO - 10.1109/ISLC.2012.6348369

M3 - Conference article

AN - SCOPUS:84870607422

SP - 82

EP - 83

JO - Conference Digest - IEEE International Semiconductor Laser Conference

JF - Conference Digest - IEEE International Semiconductor Laser Conference

SN - 0899-9406

M1 - 6348369

T2 - 23rd IEEE International Semiconductor Laser Conference, ISLC 2012

Y2 - 7 October 2012 through 10 October 2012

ER -