The Direct Benefit of SiC Power Semiconductor Devices for Railway Vehicle Traction Inverters

Shingo Makishima, Kazuki Fujimoto, Keiichiro Kondo

    研究成果: Conference contribution

    2 引用 (Scopus)

    抄録

    The only and the direct benefit by the loss reduction on SiC-SBD devices are studied in this paper. The loss of the Si-IGBT and SiC -SBD hybrid module type traction inverter for DC.600V tram car is calculated in this paper. The benefits of mass reduction and less dimensions of cooling system of the inverter are studied, compared with the case of Si-IGBT and Si-diode, and with the case of GTO and Si-diode. The thermal characteristics of the Si-IGBT and SiC -SBD hybrid module inverter are examined by the actual train operation.

    元の言語English
    ホスト出版物のタイトル2018 International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018
    出版者Institute of Electrical and Electronics Engineers Inc.
    ページ2047-2050
    ページ数4
    ISBN(電子版)9784886864055
    DOI
    出版物ステータスPublished - 2018 10 22
    イベント8th International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018 - Niigata, Japan
    継続期間: 2018 5 202018 5 24

    Other

    Other8th International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018
    Japan
    Niigata
    期間18/5/2018/5/24

    Fingerprint

    Traction (friction)
    Insulated gate bipolar transistors (IGBT)
    Diodes
    Cooling systems
    Railroad cars
    Power semiconductor devices

    ASJC Scopus subject areas

    • Energy Engineering and Power Technology
    • Electrical and Electronic Engineering

    これを引用

    Makishima, S., Fujimoto, K., & Kondo, K. (2018). The Direct Benefit of SiC Power Semiconductor Devices for Railway Vehicle Traction Inverters. : 2018 International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018 (pp. 2047-2050). [8507944] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/IPEC.2018.8507944

    The Direct Benefit of SiC Power Semiconductor Devices for Railway Vehicle Traction Inverters. / Makishima, Shingo; Fujimoto, Kazuki; Kondo, Keiichiro.

    2018 International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 2047-2050 8507944.

    研究成果: Conference contribution

    Makishima, S, Fujimoto, K & Kondo, K 2018, The Direct Benefit of SiC Power Semiconductor Devices for Railway Vehicle Traction Inverters. : 2018 International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018., 8507944, Institute of Electrical and Electronics Engineers Inc., pp. 2047-2050, 8th International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018, Niigata, Japan, 18/5/20. https://doi.org/10.23919/IPEC.2018.8507944
    Makishima S, Fujimoto K, Kondo K. The Direct Benefit of SiC Power Semiconductor Devices for Railway Vehicle Traction Inverters. : 2018 International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 2047-2050. 8507944 https://doi.org/10.23919/IPEC.2018.8507944
    Makishima, Shingo ; Fujimoto, Kazuki ; Kondo, Keiichiro. / The Direct Benefit of SiC Power Semiconductor Devices for Railway Vehicle Traction Inverters. 2018 International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 2047-2050
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    abstract = "The only and the direct benefit by the loss reduction on SiC-SBD devices are studied in this paper. The loss of the Si-IGBT and SiC -SBD hybrid module type traction inverter for DC.600V tram car is calculated in this paper. The benefits of mass reduction and less dimensions of cooling system of the inverter are studied, compared with the case of Si-IGBT and Si-diode, and with the case of GTO and Si-diode. The thermal characteristics of the Si-IGBT and SiC -SBD hybrid module inverter are examined by the actual train operation.",
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