TY - GEN
T1 - The effect of the deposition conditions on the electrodeposition of Si nanopillars in TMHATFSI
AU - Ishibashi, Yoko
AU - Akiyoshi, Takahiro
AU - Komadina, Jason
AU - Fukunaka, Yasuhiro
AU - Homma, Takayuki
PY - 2013
Y1 - 2013
N2 - Si nanopillars were prepared by electrodeposition from SiCl4 in an ionic liquid, specifically tri-methyl-n-hexyl ammonium bis- (trifluorosulfonyl) imide (TMHATFSI), and the effects of the various deposition conditions, such as bath temperature and deposition potential, were investigated. For the preparation of the patterned substrates, UV-nanoimprint lithography was employed. The thickness of resist was 90-100 nm, mold feature diameter was 150 nm, with a pitch of 450 nm. As a result, compact Si nanopillars were uniformly electrodeposited, and it was indicated that their morphology were affected mostly by the bath temperature.
AB - Si nanopillars were prepared by electrodeposition from SiCl4 in an ionic liquid, specifically tri-methyl-n-hexyl ammonium bis- (trifluorosulfonyl) imide (TMHATFSI), and the effects of the various deposition conditions, such as bath temperature and deposition potential, were investigated. For the preparation of the patterned substrates, UV-nanoimprint lithography was employed. The thickness of resist was 90-100 nm, mold feature diameter was 150 nm, with a pitch of 450 nm. As a result, compact Si nanopillars were uniformly electrodeposited, and it was indicated that their morphology were affected mostly by the bath temperature.
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U2 - 10.1149/05048.0117ecst
DO - 10.1149/05048.0117ecst
M3 - Conference contribution
AN - SCOPUS:84885822377
T3 - ECS Transactions
SP - 117
EP - 126
BT - ECS Transactions
PB - Electrochemical Society Inc.
ER -