The effects of poly-SiGe on sensing properties for ultra-low-power CMOS-embedded MEMS sensors

Yoshihiko Kurui, Hideyuki Tomizawa, Akira Fujimoto, Tomohiro Saito, Akihiro Kojima, Tamio Ikehashi, Yoshiaki Sugizaki, Hideki Shibata

研究成果: Conference contribution

抜粋

To compare Si and poly-SiGe as MEMS structural materials having 20 pm-thick, we fabricated a capacitive accelerometer on an 8-inch Si substrate using CMOS standard process and measured capacitance sensitivities of an identical sensor design. As a result, we found that the sensitivity of the SiGe sensor is 2.1 times larger than that of the Si sensor. We also confirmed that the SiGe sensor can attain lower noise level as well as lower power consumption, thanks to the higher mass density of SiGe and availability of CMOS-embedded SiGe MEMS structure. The results indicate that the poly-SiGe film is promising candidates for future CMOS-embedded sensor technology applications.

元の言語English
ホスト出版物のタイトルIEEE SENSORS 2017 - Conference Proceedings
出版者Institute of Electrical and Electronics Engineers Inc.
ページ1-3
ページ数3
ISBN(電子版)9781509010127
DOI
出版物ステータスPublished - 2017 12 21
外部発表Yes
イベント16th IEEE SENSORS Conference, ICSENS 2017 - Glasgow, United Kingdom
継続期間: 2017 10 302017 11 1

出版物シリーズ

名前Proceedings of IEEE Sensors
2017-December
ISSN(印刷物)1930-0395
ISSN(電子版)2168-9229

Other

Other16th IEEE SENSORS Conference, ICSENS 2017
United Kingdom
Glasgow
期間17/10/3017/11/1

    フィンガープリント

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

これを引用

Kurui, Y., Tomizawa, H., Fujimoto, A., Saito, T., Kojima, A., Ikehashi, T., Sugizaki, Y., & Shibata, H. (2017). The effects of poly-SiGe on sensing properties for ultra-low-power CMOS-embedded MEMS sensors. : IEEE SENSORS 2017 - Conference Proceedings (pp. 1-3). (Proceedings of IEEE Sensors; 巻数 2017-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSENS.2017.8233927