The effects on metal oxide semiconductor field effect transistor properties of nitrogen implantation into p+ polysilicon gate

Akihiko Yasuoka*, Takashi Kuroi, Satoshi Shimizu, Masayoshi Shirahata, Yoshinori Okumura, Yasuo Inoue, Masahide Inuishi, Tadashi Nishimura, Hirokazu Miyoshi

*この研究の対応する著者

研究成果: Article査読

9 被引用数 (Scopus)

抄録

We have studied in detail the effects of nitrogen implantation into a p+ polysilicon gate on gate oxide properties for the surface p-channel metal oxide semiconductor (PMOS) below 0.25 μm. The nitrided oxide film can be easily formed by the pile-up of nitrogen into the gate oxide film from the polysilicon gate. It was found that boron penetration through the gate oxide film can be effectively suppressed by nitrogen implantation into a p+ polysilicon gate because nitrogen in the polysilicon film can suppress boron diffusion, and the nitrided oxide film can also act as a barrier to boron diffusion. Moreover the hot-carrier hardness can be remarkably improved by the nitrided oxide film since interface state generation can be suppressed by the nitrided oxide film. Furthermore the number of electron traps in the gate oxide film can also be reduced by nitrogen implantation.

本文言語English
ページ(範囲)617-622
ページ数6
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
36
2
DOI
出版ステータスPublished - 1997
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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