The fabrication of Ni quantum cross devices with a 17nm junction and their current-voltage characteristics

Hideo Kaiju, Kenji Kondo, Akito Ono, Nobuyoshi Kawaguchi, Jonghan Won, Akihiko Hirata, Manabu Ishimaru, Yoshihiko Hirotsu, Akira Ishibashi

研究成果: Article査読

4 被引用数 (Scopus)

抄録

Quantum cross (QC) devices which consist of two Ni thin films deposited on polyethylene naphthalate substrates with their edges crossing have been fabricated and their current-voltage characteristics have been investigated. The cross-sectional area between the two Ni electrodes, which was obtained without the use of electron-beam or optical lithography, can be as small as 17nm × 17nm. We have successfully obtained ohmic current-voltage characteristics, which show good agreement with calculation results within the framework of the modified Anderson model. The calculated results also predict a high switching ratio in excess of 100 000:1 for QC devices having the molecule sandwiched between the Ni electrodes. This indicates that QC devices having the molecule can be expected to have potential application in novel switching devices.

本文言語English
論文番号015301
ジャーナルNanotechnology
21
1
DOI
出版ステータスPublished - 2010
外部発表はい

ASJC Scopus subject areas

  • バイオエンジニアリング
  • 化学 (全般)
  • 材料科学(全般)
  • 材料力学
  • 機械工学
  • 電子工学および電気工学

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