TY - GEN
T1 - The frequency switchable multi-layered BST/BaTiO3 epitaxial film resonator
AU - Shimidzu, Takahiro
AU - Yanagitani, Takahiko
AU - Wasa, Kiyotaka
N1 - Funding Information:
This work was supported by JST PRESTO (No. JPMJPR16R8) and KAKENHI (Giant-in-Aid for Scientific Research (B), No16H04356).
Publisher Copyright:
© 2017 IEEE.
PY - 2017/10/31
Y1 - 2017/10/31
N2 - Film bulk acoustic wave resonator (FBAR) filters are promising for the mobile communication devices. Frequency switchable filters are suitable for selecting the vacant frequency bands. Usual polarity unidirectional single layer resonator excites fundamental mode whereas polarity inverted double layer resonator excites second mode. In this study, we considered that polarity inverted structure is easily obtained by applying DC field, which is less than coercive field of BaTiO3, to two-layered BST/BaTiO3 epitaxial films. During the application of -36 V, the two-layered resonator excites fundamental mode. On the other hand, during the application of +36 V, the resonator excites second mode. These results show frequency band switching by DC field.
AB - Film bulk acoustic wave resonator (FBAR) filters are promising for the mobile communication devices. Frequency switchable filters are suitable for selecting the vacant frequency bands. Usual polarity unidirectional single layer resonator excites fundamental mode whereas polarity inverted double layer resonator excites second mode. In this study, we considered that polarity inverted structure is easily obtained by applying DC field, which is less than coercive field of BaTiO3, to two-layered BST/BaTiO3 epitaxial films. During the application of -36 V, the two-layered resonator excites fundamental mode. On the other hand, during the application of +36 V, the resonator excites second mode. These results show frequency band switching by DC field.
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U2 - 10.1109/ULTSYM.2017.8092735
DO - 10.1109/ULTSYM.2017.8092735
M3 - Conference contribution
AN - SCOPUS:85039440474
T3 - IEEE International Ultrasonics Symposium, IUS
BT - 2017 IEEE International Ultrasonics Symposium, IUS 2017
PB - IEEE Computer Society
T2 - 2017 IEEE International Ultrasonics Symposium, IUS 2017
Y2 - 6 September 2017 through 9 September 2017
ER -