The growth of AgGaTe2 layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications

研究成果: Conference contribution

抄録

The AgGaTe2 layer was formed on Ag2Te/Si structure with two different procedures by eliminating the melt-back etching. Diffusion of the Ga2Te3 source material into the Ag2Te layer and formation of the AgGaTe2 layer were both occurring during the growth when Ag2Te and Ga2Te3 source mixture was used to form AgGaTe2. It was also clear the AgGaTe2 could be formed by deposition and annealing of Ga2Te3 layer on top of the Ag2Te/Si structure. Solar cells were fabricated using the p-AgGaTe2/n-Si heterojunction, and showed conversion efficiency of approximately 3%.

本文言語English
ホスト出版物のタイトル2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
出版社Institute of Electrical and Electronics Engineers Inc.
ページ567-571
ページ数5
ISBN(電子版)9781509056057
DOI
出版ステータスPublished - 2017
イベント44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States
継続期間: 2017 6 252017 6 30

出版物シリーズ

名前2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

Other

Other44th IEEE Photovoltaic Specialist Conference, PVSC 2017
CountryUnited States
CityWashington
Period17/6/2517/6/30

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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